Compaction of nanosilicon pellets and sol-deposited films via high-vacuum annealing

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导热增强聚乙二醇相变复合材料的制备及其性能

本文以聚乙二醇(PEG)为相变材料,通过添加不同的无机填料,采用熔融共混浇筑方式制备了导热增强型相变复合材料。 通过扫描电子显微镜(SEM)、热常数分析仪、差示扫描量热仪(DSC)、红外热成像和热重分析仪研究了所制备复合材料的微观结构、导热性能与相变过程。 研究结果表明,相比于碳酸钙和氧化铝,在相同添加含量下,氮化硼(BN)可有效提高PEG的导热系数,当BN质量分数为40%时,导热系数可达到3.40 W/(m·K);当填料添加量相同时,片状BN和不规则纳米碳酸钙(CaCO₃)比球形氧化铝(Al₂O₃)对PEG具有更加优良的定型效果,在相变过程中,能够更加有效阻隔PEG的流动,保持复合材料的形状稳定性。     

6英寸低位错锗单晶生长热场设计

锗片作为衬底材料已在空间太阳电池领域得到广泛的应用,新型锗基空间太阳能电池对锗片的需求由4英寸(1英寸=2.54 cm)提高到6英寸后,低位错锗单晶的生长难度增大。本文设计开发了一种适用于直拉法生长大尺寸、低位错锗单晶的双加热器热场系统,模拟研究了不同形状主加热器的热场分布,从而得到最优的热场环境。研究发现:渐变长度为L/h=1/2、渐变率α为65°的渐变型主加热器热场结构能够获得最佳的热场分布,有利于低位错单晶的生长。经验证,生长的锗单晶热应力较低,位错密度在310～450 cm^-2范围内。     

Experimental and Theoretical Mechanistic Study on the Thermal Decomposition of 3,3-diphenyl-4-(trichloromethyl)-5-nitropyrazoline

The present paper is a continuation of comprehensive study regarding to synthesis and properties of pyrazoles and their derivatives. In its framework an experimental and theoretical studies of thermal decomposition of the 3,3-diphenyl-4-(trichloromethyl)-5-nitropyrazoline were performed. It was found, that the decompositions of the mentioned pyrazoline system in the solution and at the melted state proceed via completely different molecular mechanisms. These mechanisms have been explained in the framework of the Molecular Electron Density Theory (MEDT) with the computational level of B3LYP/6-31G(d). A Bonding Evolution Theory (BET) examination of dehydrochlorination of the 3,3-diphenyl-4-(trichloromethyl)-5-nitropyrazoline permits elucidation of the molecular mechanism. It was found, that on the contrary for most known HCl extrusion processes in solution, this reaction is realised via single-step mechanism.     

(Sm0.5Gd0.2Nd0.3)2(Hf0.3Ce0.7)2O7复合氧化物的热物理性能

为寻求新型热障涂层用陶瓷材料,本文采用高温固相烧结法制备了(Sm_0.5Gd_0.2Nd_0.3)₂(Hf_0.3Ce_0.7)₂O₇复合氧化物。利用XRD分析了其晶体结构,SEM分析其显微组织,膨胀仪测试其热膨胀性能,激光热导仪测试其热扩散系数。结果表明,成功制备了具有单一萤石晶体结构的(Sm_0.5Gd_0.2Nd_0.3)₂(Hf_0.3Ce_0.7)₂O₇复合氧化物。其显微组织结构致密,晶界清晰无其他相存在。由于复杂的元素组成和较大的原子量,其热导率明显低于7YSZ和Sm₂Ce₂O₇。其较低的热膨胀系数则归因于B位离子较小的离子半径,但其热膨胀系数依然满足热障涂层的要求。     

基于Rietveld精修方法解析Bi2O3的原子热振动

三氧化二铋(Bi₂O₃)是氧离子导电体,为了获得它的原子热振动各向同性温度因子,对该粉末晶体进行X射线衍射实验,建立了晶体结构模型,利用Rietveld 精修方法的RIETAN-2000 程序对所得实验结果进行了晶体结构精修,通过最大熵方法(MEM)解析得到了粉末晶体的等高电子密度分布三维(3D) 和二维(2D)可视化图谱。结果表明,各原子Bi₍₁₎、Bi₍₂₎、O₍₁₎、O₍₂₎和O₍₃₎的原子热振动各向同性温度因子分别为0.004 938 nm²、0.004 174 nm²、0.007 344 nm²、0.007 462 nm²、和0.007 857 nm²,等高电子密度分布的可视化,进一步验证了晶体结构模型和原子位置的准确性,这些参数对研究晶体材料的热性质具有一定参考意义。     

High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz

Ultra-thin barrier (UTB) 4-nm-AlGaN/GaN normally-off high electron mobility transistors (HEMTs) having a high current gain cut-off frequency (f_T) are demonstrated by the stress-engineered compressive SiN trench technology. The compressive in-situ SiN guarantees the UTB-AlGaN/GaN heterostructure can operate a high electron density of 1.27×10¹³cm^-2, a high uniform sheet resistance of 312.8 Ω /□, but a negative threshold for the short-gate devices fabricated on it. With the lateral stress-engineering by full removing in-situ SiN in the 600-nm SiN trench, the short-gated (70 nm) devices obtain a threshold of 0.2 V, achieving the devices operating at enhancement-mode (E-mode). Meanwhile, the novel device also can operate a large current of 610 mA/mm and a high transconductance of 394 mS/mm for the E-mode devices. Most of all, a high f_T/f_max of 128 GHz/255 GHz is obtained, which is the highest value among the reported E-mode AlGaN/GaN HEMTs. Besides, being together with the 211 GHz/346 GHz of f_T/f_max for the D-mode HEMTs fabricated on the same materials, this design of E/D-mode with the realization of f_max over 200 GHz in this work is the first one that can be used in Q-band mixed-signal application with further optimization. And the minimized processing difference between the E- and D-mode designs the addition of the SiN trench, will promise an enormous competitive advantage in the fabricating costs.     

Ultrasonics as a tool for development of pine-needle extract loaded bee wax edible packaging for value addition of Himalayan cheese

In the present study, Himalayan cheese, kradi was coated with beeswax loaded with pine needle extract (PNE) to increase its shelf life and nutraceutical potential. PNE was extracted via ultrasonication and incorporated into beeswax at concentrations, 2:1, 1:1, and 2:3 (grams of beeswax to mL of PNE). The dispersion of PNE in the coatings was carried out using an ultrasonic probe at a frequency of 20 kHz for 15 min and at power rating of 500 W. The coatings were characterised using scanning electron microscopy, light microscopy, dynamic light scattering (DLS), fourier transmission infrared spectroscopy. DLS revealed a hydrodynamic diameter and zeta potential of 12.11 ± 0.41 µm and −19.32 ± 0.61 mV for coating loaded with highest concentration of PNE. The bioactivities of the coating including antioxidant, antidiabetic and antibacterial assays revealed significantly higher values with the increase in PNE concentration. Shelf life and sensory evaluation study including microbiological and sensory analysis revealed inhibition of mould growth and good score of texture and appearance with the increase in concentration of PNE. The study provides a future perspective for application of beeswax loaded PNE coatings in cheese industry.     

Three-dimensional interfacial fracture analysis of a one-dimensional hexagonal quasicrystal coating

In this paper, the three-dimensional (3D) interfacial fracture is analyzed in a one-dimensional (1D) hexagonal quasicrystal (QC) coating structure under mechanical loading. A planar interface crack with arbitrary shape is studied by a displacement discontinuity method. Fundamental solutions of interfacial concentrated displacement discontinuities are obtained by the Hankel transform technique, and the corresponding boundary integral-differential equations are constructed with the superposition principle. Green’s functions of constant interfacial displacement discontinuities within a rectangular element are derived, and a boundary element method is proposed for numerical simulation. The singularity of stresses near the crack front is investigated, and the stress intensity factors (SIFs) as well as energy release rates (ERRs) are determined. Finally, relevant influencing factors on the fracture behavior are discussed.     

InSb芯片碎裂与迸溅金点的关系

批量生产中经常发生的锑化铟(InSb)芯片碎裂问题制约着InSb红外焦平面探测器(IRFPAs)成品率的提升.经分析认为:低周期液氮冲击下发生在器件边沿区域的InSb芯片破碎与该区域中迸溅金点的存在有关.为从理论上明晰迸溅金点对InSb芯片局部碎裂的影响,本文建立了包含迸溅金点的InSb IRFPAs结构模型,分析了迸溅金点的存在对应力分布的影响.在此基础上,在应力集中处预置不同长度的初始裂纹用以描述InSb晶片中的位错,以能量释放率为判据,探究InSb芯片碎裂与迸溅金点和位错线长短的关系.结论如下:1)迸溅金点的存在对InSb芯片碎裂的影响是局部的,在迸溅金点与InSb芯片接触区域的两侧会形成两个应力集中点; 2)环绕预置裂纹的能量释放率会随着预置裂纹长度的增加而加速增大,当预置裂纹长度接近InSb芯片上表面时,能量释放率近乎指数增加,并在预置裂纹贯穿InSb芯片时达到最大值; 3)迸溅金点引起的InSb芯片破碎属于Ⅰ型断裂失效模式,在多周期液氮冲击中,位错线在应力集中效应的驱使下逐步扩展,直至贯穿InSb芯片,最终形成宏观碎裂失效现象.